The Fabrication of GaN Schottky Barrier Diodes With a Nickel Pseudo-substrate using Laser Lift-Off Technology
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, the fabrication of GaN vertical Schottky Barrier diodes (SBDs) with Ni pseudo-substrate is studied. Laser Lift Off and Ni electroplating were employed for the removal of the GaN epilayers from the sapphire substrate and serving as a mechanica...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42252154994706326234 |