The Fabrication and Characterization of Aluminium Nitride Gate Insulator Capacitors and Field-Effect Transistors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === Abstract To improve the speed, packing density and performance of integrated circuits, the dimension of devices has been continuously scaled down, it has pushed the structure of conventional MOS devices to its physical limits. Because the thickness of gate d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63331543623501759409 |