Investigation and Fabrication of GaInNAs Near Infrared Photodetectors
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === In this thesis, we used the novel GaInNAs material as the absorption layer of photodetector grown on GaAs substrate by Metal Organic Vapor Phase Epitaxy (MOVPE). Incorporating proper amount of indium and nitrogen into GaAs will let GaInNAs be lattice-match...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76389198786020860385 |