Investigation of Heterojunction and Tunneling-Emitter Bipolar Transistors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === Heterojunction bipolar transistors (HBTs) based on III-V compound semiconductor material systems have been widely applied in digital and microwave circuit applications due to their excellent high-speed and microwave performances combined with high current d...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37673435273109193306 |