Efficiency of GaN based light emitting diode improved by chip process technique and the growth of GaN based light emitting diode on Si substrate
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 93 === We investigated n-GaN etched by an inductively coupled plasma (ICP) etcher using Cl2/He as the etching gases. Smooth etched n-GaN surface could be observed by using Cl2/He as etching gas. The maximum etching rate could reach 8400A/min for n-GaN etched in Cl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75620422624470837026 |