| Summary: | 碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 93 === In this thesis,the oxidation of 300 mm silicon wafer in the RTP chamber are studied numerically.
During the oxidation processes, the wafer is heated by lamps from room temperature to the designated process temperature rapidly and maintain at that temperature thereafter. The radiative heat exchange between the wafer and heating lamps in the chamber, the conduction in the wafer and convection of oxygen are solved simultaneously.
The oxide growth rate follows the power-law relation x=s+at^b,where a and b are function of temperature and pressure. The effects of of several operational condtions, such as: heating lamps control, oxidation process temperature, the chamber pressure and the wafer rotatiingl speed, on the temperature distribution of the wafer and the oxide thickness uniformity are studied.
It is found that the oxide thickness uniformity depends strongly on the wafer surface temperature distribution. In comparison with the fixed-lamp-power process, the time-varying-lamp-power process typically results in better temperature uniformity, and thus better thickness uniformity. When the process temperature is raised, the oxide grows faster, but the oxide thickness uniformity suffers. Furthermore, the oxide thickness uniformity. In addition, the lower chamber pressure and the higher rotating speed of wafer usually achieve better oxide thickness uniformity.
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