Studies of Oxide Thickness Uniformity in RTO
碩士 === 國立成功大學 === 航空太空工程學系碩博士班 === 93 === In this thesis,the oxidation of 300 mm silicon wafer in the RTP chamber are studied numerically. During the oxidation processes, the wafer is heated by lamps from room temperature to the designated process temperature rapidly and maintain at that tempera...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/62399816724177996128 |