Fabrication and Characterization of HfOx and HfOxNy Thin Films for Gate Dielectric Applications
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 93 === Hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) gate dielectrics were prepared by reactive magnetron sputtering from Hf target, following by postdeposition annealing at 700 ℃ in N2 ambient. We investigated the material and electrical characteristics t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/56009943051926042930 |