The Investigation on GaN Growth byEpitaxial Lateral Overgrowth
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 93 === The optical performance of a GaN blue-light emitting diode is greatly influenced by the density and distribution of threading dislocations, which in turn strongly depend on the ratio of mask to window width during Epitaxial Lateral Overgrowth (ELOG). Thus...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/95774979747453593523 |