Study of polysilicon film induced by nano Au on armorphous silicon film

• Main Authors: ChangChun-Yi, 張竣逸
• Other Authors: Chihng-Tsung Liauh
• Format: Others
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/72109299760412231630

碩士 === 崑山科技大學 === 機械工程研究所 === 93 === In this thesis, nano gold powder, (Au), triggered anisotropic amorphous Silicon, ( a-Si ), thin film is applied for the research of crystallized polycrystalline silicon ,( poly-Si ), films on optpelectronic device. This process first utilizes direct-reduction process to exchange gold ions to gold atoms. Next, by using plasma enhanced chemical vapor deposition, ( PECVD ), a-Si is grown on the surface of the wafer, then thermal evaporates nano gold powder ( Au ) on the testing wafer. Finally, processes the wafer in different annealing temperature to relive the thermal stress and by using instruments, such as SEM, and XRD to explore silicon crystal structure and possible repeated configuration. Anisotropic crystallized polycrystalline silicon, ( poly-Si ), formed by amorphous silicon, ( a-Si ), thin film is so call metal-induced lateral crystallization ( MILC ), technology. The advantage of MILC is the lateral growth of the crystallized polycrystalline silicon, ( poly-Si ), films is greater then the vertical growth therefore, the number of grain boundary is greatly reduced which is beneficial for optpelectronic device for instance TFT-LCD lateral current transfer. * author ** advisor *** advisor