The study of material properties of AlInP and GaP epitaxial layers grown on differential misorientated GaAs substrates
碩士 === 義守大學 === 電子工程學系碩士班 === 93 === In this dissertation, we reported the growth of AlInP and GaP layers of LEDs structure by MOCVD on GaAs substrates. And we used several measurement techniques, such as double-crystal X-ray diffraction (DCXRD), photoluminescence (PL) spectroscopy, secondary ion ma...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13282717049928265383 |