Effects of the surface treatment on n-type GaN Schottky diodes
碩士 === 逢甲大學 === 電機工程所 === 93 === Abstract The relationship between the surface states related to nitrogen -vacancy defects and surface Fermi level pinning has been investigated using x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and capacitance–voltage measurements. Barr...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65187138840311198194 |