The Study of High Temperature Process in Anneal Wafer Bulk Micro Defect

• Main Authors: Benson Huang, 黃耀慧
• Other Authors: Wen-Lou Yang
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/86380148828691355339

碩士 === 逢甲大學 === 電機工程所 === 93 === Abstract In this study, we discuss the oxygen interstitial of anneal wafer after high temperature heat treatment will out of diffusion and then forming the Denuded Zone area in wafer surface, the other oxygen interstitial after 600~800℃ thermal process will nucleation and precipitate become Bulk Micro Density in device area, this status will result wafer yield loss, Our contents is make a research to study the yield of the process after wafer annealing. In the first research, different oxygen concentration silicon of EPI wafer Hi wafer have different characteristic (Oi, BMD, and DZ ). Our research is to confirm the correlation of characteristic after the Mask Rom and Flash full thermal budget. From the experiment of EPI wafer, the Bulk Micro Density have no distinct change after thermal process. The result tell us, oxygen precipitate not diffusion to poly layer. But Hi wafer after different thermal process, the Bulk Micro Density have more variation depend on oxygen interstitial and thermal temperature difference. In the second research, we use disparity oxygen precipitate of anneal wafer after 2 type flash thermal process to discuss the relationship between Yield、Oxygen interstitial、Bulk Micro Density、Reliability and hope that we will define the optimum technique to find suitable wafer type for different thermal process.