The Study of High Temperature Process in Anneal Wafer Bulk Micro Defect
碩士 === 逢甲大學 === 電機工程所 === 93 === Abstract In this study, we discuss the oxygen interstitial of anneal wafer after high temperature heat treatment will out of diffusion and then forming the Denuded Zone area in wafer surface, the other oxygen interstitial after 600~800℃ thermal process will nucleatio...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/86380148828691355339 |