Characterizations of pMOSFFETs on Different Crystal Orientation Substrates with Different Nitrogen Implantation Dosages

碩士 === 逢甲大學 === 電子工程所 === 93 === The subject of this thesis is to investigate the effect of the surface state density (Dit), carrier mobility (μ) and sheet resistance by implanting nitrogen dosages into different silicon substrates such as Si(100), Hydrogen Annealed Wafer and Si(111) on PMOSFET. Abo...

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Bibliographic Details
Main Authors: Hsiang-Mei Tan, 譚祥梅
Other Authors: Wen Luh Yang
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/69305634701647839485