Optical Characterization of GaN Epitaxial Layer and LED Structure Grown on Patterned Sapphire Substrate
碩士 === 長庚大學 === 電子工程研究所 === 93 === In the front of the article, the optical characteristics of GaN epitaxial layer on the patterned sapphire substrate with different trench depth were discussed. To study the effects of dislocation density and mechanism, the samples(GaN epilyers) were grown by SR-200...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33823382300310879436 |