The impact of poly gate sidewall oxide thickness on MOSFET’s gate-induced drain leakage behavior

The impact of poly gate sidewall oxide thickness on MOSFET’s gate-induced drain leakage behavior

碩士 === 長庚大學 === 電子工程研究所 === 93 === The leakage in the drain region is a crucial issue for scaling of the MOSFET. The off-state gate-induced drain leakage (GIDL) current is one of the major contributors to the overall MOSFET leakage. GIDL is induced by band-to-band tunneling (BTBT) effect in the depl...

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Bibliographic Details
Main Authors:	Huang Tao Kun, 黃道坤
Other Authors:	J.P.Lin
Format:	Others
Language:	zh-TW
Published:	2005
Online Access:	http://ndltd.ncl.edu.tw/handle/12981841264445016012

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