The impact of poly gate sidewall oxide thickness on MOSFET’s gate-induced drain leakage behavior
碩士 === 長庚大學 === 電子工程研究所 === 93 === The leakage in the drain region is a crucial issue for scaling of the MOSFET. The off-state gate-induced drain leakage (GIDL) current is one of the major contributors to the overall MOSFET leakage. GIDL is induced by band-to-band tunneling (BTBT) effect in the depl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12981841264445016012 |