Effects of Dopant Out-Diffusion Deposited Different Poly-Si Thickness and Temperature for Buried Strap of DRAM Technology
碩士 === 長庚大學 === 電子工程研究所 === 93 === In DRAM process, a deep trench’s 2nd poly-Si & 3rd poly-Si play the key roles as buried strap forming supplier. As impurity in poly-Si crystal went through intrinic poly-Si and nitride interface diffusing into silicon subsrate. The various poly-Si process cause...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10183557199169007376 |