Development and Analysis of Scanning Capacitance Microscopy Technology
碩士 === 長庚大學 === 電子工程研究所 === 93 === With the shrinkage of MOSFETs, accurately controlling doping concentrations becomes more important. SCM has been developed as a tool for analyzing doping profiles. The SCM samples are similar to MOS capacitors. The behavior of carriers can be monitored by analyz...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97836769465525265398 |
| Summary: | 碩士 === 長庚大學 === 電子工程研究所 === 93 === With the shrinkage of MOSFETs, accurately controlling doping concentrations becomes more important. SCM has been developed as a tool for analyzing doping profiles. The SCM samples are similar to MOS capacitors. The behavior of carriers can be monitored by analyzing the difference in capacitance.
Majority carriers and minority carriers affect the capacitance between the depletion region. The evident change of capacitance can be observed due to minority carriers will flow from the other side of the pn junction when the tip is located at the depletion boundaries. By scanning the sample with a strong inversion bias, depletion boundaries can be clearly identified. Besides, with selected biases for scanning the sample, boundaries of the depletion region can be clearly demonstrated for memory array devices.
Our study includes using HfO2 insulator used for SCM measurements. Effects from fringing field and shift of C-V curves were observed.
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