快閃記憶體關鍵技術於國軍資料儲存之應用研究

碩士 === 國防大學中正理工學院 === 應用物理研究所 === 93 === When seeking the numerous choices of the next-generation memory, the Flash memory has many advantages such as non-volatility, small cell size, high-density, low-voltage operation, low power consumption, high program/erase speed, better radiation hardness and...

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Bibliographic Details
Main Authors: Tzung-Kuen Tasi, 蔡宗昆
Other Authors: Chin-Hsing Kao
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/60561550415560375578