Design and Analysis of Read∕Write Scheme for Magnetic Random Access Memory (MRAM)

• Main Authors: Jia-Mou Lee, 李佳謀
• Other Authors: Juhng-Perng Su
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/86532972266227844916

碩士 === 國立雲林科技大學 === 電機工程系碩士班 === 92 === Design and analysis of read/write scheme for magnetic random access memory (MRAM) are the main subjects in this study. MRAM are a high speed、high density、low voltage and nonvolatile memories, it will become a future mainstream memory technology. Read/write scheme for MRAM has tow structures: the 1T1MTJ structure and the XPC structure. The former memory cells include a bit line, a write word line, a read word line, a magnetic tunnel junction(MTJ) and a transistor; this structure is complicate but read and write are simple. The latter memory cells consist of only a bit line, a word line and a MTJ. It’s simple; however, it’s difficult to read and write. In this paper, read/write scheme designed with TSMC 0.18μm CMOS SP5M technology and resistance values of the MTJs are 10kΩ and 15kΩ (the MR ratio is 50%).