Design and Analysis of Read∕Write Scheme for Magnetic Random Access Memory (MRAM)

碩士 === 國立雲林科技大學 === 電機工程系碩士班 === 92 === Design and analysis of read/write scheme for magnetic random access memory (MRAM) are the main subjects in this study. MRAM are a high speed、high density、low voltage and nonvolatile memories, it will become a future mainstream memory technology. Read/write s...

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Bibliographic Details
Main Authors: Jia-Mou Lee, 李佳謀
Other Authors: Juhng-Perng Su
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/86532972266227844916