The 1.8~1.6nm Gate Dielectrics Prepared by Plasma-Nitridation for 0.13um CMOS Technology Application and Beyond

• Main Authors: Pan, Chun-Peng, 潘俊澎
• Other Authors: Huang, Heng-Sheng
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/48938724714296935755

碩士 === 國立臺北科技大學 === 機電整合研究所 === 92 === In order to improve the device performance, gate oxide has been scaled aggressively. The gate leakage current through the gate oxide increases significantly because direct tunneling is the primary conduction mechanism. The high gate leakage increases standby power consumption, which is a major concern for low power device applications. Decoupled plasma nitridation of is a new technology using inductive coupling to generate nitrogen plasma and implant a high level of nitrogen concentration onto the top surface layer of an ultra-thin gate oxide. This will help to increase the dielectric constant of the gate dielectric, and improve the boron penetration problem in p-channel MOSFETs. Traditional nitrided oxide prepared using N2O or NO thermal nitridation will have nitrogen piling up at the oxide/substrate interface, which results in boron pile up within the oxide causing an increase in the electron trapping and degradation of the oxide reliability. In our study, using traditional nitrided oxide methods result in poor performance、worse resistance to boron penetration、small EOT (effective oxide thickness) decreasing range. In this thesis, we use the current-voltage (I-V) measurements, capacitance-voltage (C-V) measurements, and lots of electric parameters studies were used to characterize the MOSFETs performance with Decoupled-Plasma nitrided oxide and compared with conventional methods.