The 1.8~1.6nm Gate Dielectrics Prepared by Plasma-Nitridation for 0.13um CMOS Technology Application and Beyond
碩士 === 國立臺北科技大學 === 機電整合研究所 === 92 === In order to improve the device performance, gate oxide has been scaled aggressively. The gate leakage current through the gate oxide increases significantly because direct tunneling is the primary conduction mechanism. The high gate leakage increases...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48938724714296935755 |