High reliability GaN-based light-emitting diodes with photo-enhanced wet etching
碩士 === 國立臺北科技大學 === 光電技術研究所 === 92 === This study concerns the generation of GaN-based light-emitting diodes (LEDs), whose n-GaN surfaces were processed using photo-enhanced chemical etching (PEC) by illumination using an unfiltered Hg arc lamp. Reducing the damage induced by plasma dry e...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06523318769287782839 |