Properties of Low-k Porous Hydrogen Silsesquioxane

• Main Authors: Chanug-Chih Chang, 張仲志
• Other Authors: Yao-Yi Cheng
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/86096269972281267691

碩士 === 國立臺北科技大學 === 有機高分子研究所 === 92 === As the dimension of IC devices continues to shrink, RC time delay becomes more important. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. This paper presents study on porous Hydrogen Silsesquioxane (XLK) of dielectric constant near 2. XLK solution was spin-on coated and then treated by wet ammonia. During the treatment, XLK film went through a sol-gel process. Pores were uniformly formed in XLK film after a baking process to remove solvent. A solid network structure of XLK was then formed after a high-temperature curing process. In this article, we compared the properties of XLK with varying process time of wet ammonia treatment and curing temperature. Change of chemical structure was analyzed by Fourier transform infrared (FTIR) spectrometry. We found that the cage structure of XLK was reduced but the network structure was enhanced as treatment time of wet ammonia increased. Electrical characterization of XLK with varying process conditions has also been examined. Finally, mechanical properties such as hardness and Young’s modulus were measured by nano-indentation technique. The adhesion strength of XLK was also compared with that of HSQ.