Properties of Low-k Porous Hydrogen Silsesquioxane
碩士 === 國立臺北科技大學 === 有機高分子研究所 === 92 === As the dimension of IC devices continues to shrink, RC time delay becomes more important. Therefore, it is necessary to use low-dielectric-constant (low-k) materials to reduce the capacitance between the metal interconnection. This paper presents study on poro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86096269972281267691 |