The Characteristics of TiN Films Grown by Atomic Layer Chemical Vapor Deposition
碩士 === 南台科技大學 === 電機工程系 === 92 === In this study, titanium nitride (TiN) films were deposited on p-type Si (100), n-type Si (100), and SiO2 substrates by using precursors of TiCl4 and NH3 in an atomic layer chemical vapor deposition (ALCVD) system. The impurity, resistivity, structure and surface mo...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/50475026539302397236 |