The characteristics and simulations of Si/SiGe`heterojunction at strained-Si devices
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === Advanced Si processing technology has allowed MOSFETs to be scaled into nano regime, realizing incredible gains in performance and integration. Reductions of channel length and gate dielectric thickness have been the major factors for increasing MOSFET current d...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54324337997438186076 |