Electroluminescence Characteristics of Si/SiGe Superlattice
碩士 === 國立臺灣大學 === 電子工程學研究所 === 92 === The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. In addition, the progress of the growth techniques for quantum heterojunction structure is in advanced. So the heterojunction structur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46510771007762205536 |