The Characterization of Proton Implantation in Gallium Nitride Materials and Related Devices
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 92 === The goal of this thesis is to investigate the influence of proton irradiations on the optical and electrical properties of GaN materials and related devices. We used SIMS to measure proton distribution depth of GaN after proton irradiations and used PL and CTLM...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48576086776541219626 |