Effect of Different Annealing Processes on Microstructure of Fe Implanted Silicon Substrate
碩士 === 國立清華大學 === 材料科學工程學系 === 92 === Semiconducting β-FeSi2 have attracted great attention in the recent decade. Because it has a direct band-gap of about 0.8eV, and it can emit a light of 1.55μm. With this property, silicon based IR-LED(Light emitting device) and IR-Sensor can be synthesized. But...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30514540774266800120 |