Selective growth and control of Si nanowires

碩士 === 國立清華大學 === 電子工程研究所 === 92 === In our study, we have developed the technology of Si nanowire synthesis and used electric field to control the orientation of Si nanowires. We have also put forward a reasonable explanation for the growth mechanism. We fabricated the pattern...

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Bibliographic Details
Main Authors: Hong-Kai Wang, 王鴻凱
Other Authors: Huey-Liang Hwang
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/64409100585193483950