Fabrication and Simulation of the Cross-Gate SOI MOSFET
碩士 === 國立中山大學 === 電機工程學系研究所 === 92 === In this thesis, the Cross-Gate SOI MOSFET that has double sources and double drains was successfully fabricated. The new SOI device structure has five unique features. First, it uses mesa isolation instead of using conventional LOCOS and trench isolation to avo...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99193184395821182506 |