The study of growth and characterization of Group III nitride semiconductor by RF Plasma-assisted Molecular Beam Epitaxy
博士 === 國立中山大學 === 材料科學研究所 === 92 === The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN film, nitridation and low temperature buffer layer were applied to overcome the issue of lattice...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89148032629871796682 |