InGaAlAs/InP Semiconductor Optical Amplifier Structures Grown by Molecular Beam Epitaxy
碩士 === 國立中山大學 === 光電工程研究所 === 92 === The main work of this thesis is to design the TE-polarized SOA structures for booster amplifier, and the polarization-independent SOA structures for preamplifier at receiver end. In the SOA structure, we add a lattice-matched ternary compound InGaAs as an ext...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58061289770264785089 |