Apply microwave PECVD to deposit silicon thin film at low temperature.
碩士 === 國立中央大學 === 光電科學研究所 === 92 === Abstract It applies microwave PECVD to deposit silicon thin film at low temperature,searching for the best parameter of low temperature poly silicon.Our gas source are silane,hydrogen,and argon,and we study the quality of thin film by changing some parameter.Afte...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79101927482480930214 |