Characteristics of WSix Schottky contact on n-GaN
碩士 === 國立中央大學 === 物理研究所 === 92 === The Schottky barrier heights of WSix contact s onto GaN are about 0.54eV,and they exhibited good thermal stability after 750℃ for 1 hour alloying. After 950℃for 1 hour alloying, SBH increases up to 0.65 eV. The Schottky barrier heights of WSix contact s onto LT-GaN...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93185345958971445960 |