| Summary: | 碩士 === 國立中央大學 === 化學工程與材料工程研究所 === 92 === There are two major topics in this thesis. One is the research of mold release agents and surface energy for nanoimprint lithography . The other is the temperature distribution of e-beam patterning.
The following is the first major topic. As all imprint techniques rely on contact between resist and mold, the wetting and adhesion characteristics of the polymer materials to the substrate are critical issues. The strength of adhesion between mold surface and resist is characterized by the amount of energy required to separate the two materials. In this study, trichloro(3,3,3-trifluoropropyl)silane (FPTS) and trichloro(1H, 1H, 2H, 2H- perfluorooctyl)silane (FOTS) are used for self-assembled monolayers (SAM) on mold as releasing and anti-sticking layer for nanoimprint. Their formation mechanism can be provided the evidence of a chemical reaction between the head groups of different fluorinated trichlorosilanes and the surface hydroxyl groups by FTIR. We use contact angle system、ellipisometer、atomic force microscopy to discuss the nature properties of SAMs including surface energy，film thickness，surface roughness etc. The results demonstrated that the resist surface revealed the lower defect and roughness after separation of imprinting by mold with SAMs of FOTS monolayer, ascribed to the FOTS monolayer with a larger amount of -CF2 than FPTS monolayer resulted in lower surface energy. Furthermore, the surface energy effect influenced not only the defect on the resist after separation, but the resolution of patterning of nanoimprint directly. In addition,we use Oss＆Good theory to estimate the surface energy of some materials including some photoresists ，silicon dioxide，copolymers of PMMA-PMAAM-PS . In this purpose, we hope establishing a database to be used as a reference in selecting imprinted materials for nanoimprint lithography.
The following is the second major topic. In this research, we develop a new method to estimate the temperature distribution of e-beam patterning. The resists we choose are SU-8，NEB，193 photoresists. The results demonstrated SU-8 photoresist has higher temperature distribution than the other ones because of its thicker film. This method has some advantages like simple、cheap etc.
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