Optimal Operation of Chemical Mechanical Planarization：Dynamic Programming Approach

• Main Author: 李永洲
• Other Authors: 林家瑞
• Format: Others
• Language: en_US
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/13235661391273876060

碩士 === 國立交通大學 === 機械工程系所 === 92 === In this thesis, the impact on non-planarization index by the down force and rotational speed during a SiO2 or Cu CMP process was investigated. Since the magnitudes of down force and rotational speed have limits, we choose the dynamic programming approach because of its ability to achieve constrained optimization by the down force and rotational speed. The duration and the amount of input were computed based on the more accurate chemical mechanical polishing model when the other parameters were fixed. Experiments based on dynamic programming were done for blanket wafers and the conventional operation was compared with the dynamic programming operation. Besides, the model for the step height reduction was established in the case of pattern wafer. The model was based on the assumption that at the feature scale, high areas on the wafer experience higher pressure than the lower areas. The influence of the planarization efficiency by the down force was discussed based on the simulation result.