Surface state density profiles of GaN using C-V measurement

碩士 === 國立交通大學 === 電子物理系所 === 92 === Abstract This thesis is focused on profiling surface state density of GaN Schottky diode using capacitance-voltage measurement. It is known that if large quantity of surface states do exist on the GaN surface, the corresponding curve of the reciprocal square of th...

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Bibliographic Details
Main Authors: Ming-Hsun Kao, 高銘遜
Other Authors: Wei-Kuo Chen
Format: Others
Language:zh-TW
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/d5x933