Studies of micro-structures on GaN surface by scanning probe measurement
碩士 === 國立交通大學 === 電子物理系所 === 92 === We have studied the electrical properties of n-GaN (Ni/GaN) Schottky diode covered with variety of densities of V-defects. The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x5x9q3 |