Study of NBTI in pMOSFETs with Poly-SiGe Gate
碩士 === 國立交通大學 === 電子物理系所 === 92 === In this study, the effects of poly-SixGe1-x gate MOSFET’s with nitrogen co-implantation process are investigated. The subject is focus on NBTI (Negative Bias Temperature Instabilities) of different nitrogen dosages, boron penetration, and gate depletion of the pMO...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m79g2m |