Study of self-assembled InAs quantum dots covered by an In0.14AlAs and In0.14GaAs combination layer
碩士 === 國立交通大學 === 電子物理系所 === 92 === The electrical and optical properties of self-assembled InAs quantum dots(QDs) covered by an In0.14AlAs and In0.14GaAs combination layer are investigated by photoluminescence, current-voltage (I-V), capacitance-voltage (C-V), and admittance spectroscopy. Four samp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39q7xk |