Nitrogen Treatment on CoTiO3 High-K Gate Dielectrics
碩士 === 國立交通大學 === 電子物理系所 === 92 === In this study, nitrogen treatment on CoTiO3 high-k gate dielectrics of MIS capacitor structure is investigated. First of all, low energy N2+ or N+ implantation was used to incorporate nitrogen into CoTiO3. Results show that samples with nitrogen incorporation exhi...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hf5893 |