Analysis of Flicker Noise Mechanism in Ultra-Thin Oxide n-MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 92 === Low-frequency flicker noise in n-MOSFETs with gate oxide thickness in direct tunneling regime is investigated. For a 14Å oxide, excess low frequency noise arising from interface trap assisted electron and hole recombination is observed. In such thin oxide devices,...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/euf4st |