The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer

The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer

碩士 === 國立交通大學 === 電子工程系所 === 92 === In this thesis, the characteristics of excimer laser annealed low temperature polycrystalline silicon TFT's with/without an ultra-thin a-Si layer have been investigated and compared. With capping an appropriate ultra-thin a-Si layer, the surface roughness of...

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Main Authors: Hsueh-Jen Yang, 楊學人
Other Authors: Kow-Ming Chang
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/dq74v8
id ndltd-TW-092NCTU5427042
record_format oai_dc
spelling ndltd-TW-092NCTU54270422019-05-15T19:38:01Z http://ndltd.ncl.edu.tw/handle/dq74v8 The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer 具有超薄非晶矽層之高效能雷射退火複晶矽薄膜電晶體之製作與特性研究 Hsueh-Jen Yang 楊學人 碩士 國立交通大學 電子工程系所 92 In this thesis, the characteristics of excimer laser annealed low temperature polycrystalline silicon TFT's with/without an ultra-thin a-Si layer have been investigated and compared. With capping an appropriate ultra-thin a-Si layer, the surface roughness of laser-annealed channel is not only decreased, but also the On/Off current ratio is improved about one order without extra mask step and kink effect is further suppressed. We also find that the optimum thickness of capping ultra-thin a-Si layer is about 5-nm. In our study, the On/Off ratio is rose from 4.15 x 104 to 3.45 x 105 for Vds = 5 V, Threshold voltage slightly shift to 2.43 V and RMS surface roughness of channel can be improved to 8.52-nm. And it has better hot-carrier stress endurance than conventional TFTs without an ultra-thin a-Si layer. Kow-Ming Chang Cheng-May Kwei 張國明 桂正楣 2004 學位論文 ; thesis 27 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立交通大學 === 電子工程系所 === 92 === In this thesis, the characteristics of excimer laser annealed low temperature polycrystalline silicon TFT's with/without an ultra-thin a-Si layer have been investigated and compared. With capping an appropriate ultra-thin a-Si layer, the surface roughness of laser-annealed channel is not only decreased, but also the On/Off current ratio is improved about one order without extra mask step and kink effect is further suppressed. We also find that the optimum thickness of capping ultra-thin a-Si layer is about 5-nm. In our study, the On/Off ratio is rose from 4.15 x 104 to 3.45 x 105 for Vds = 5 V, Threshold voltage slightly shift to 2.43 V and RMS surface roughness of channel can be improved to 8.52-nm. And it has better hot-carrier stress endurance than conventional TFTs without an ultra-thin a-Si layer.
author2 Kow-Ming Chang
author_facet Kow-Ming Chang
Hsueh-Jen Yang
楊學人
author Hsueh-Jen Yang
楊學人
spellingShingle Hsueh-Jen Yang
楊學人
The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
author_sort Hsueh-Jen Yang
title The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
title_short The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
title_full The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
title_fullStr The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
title_full_unstemmed The Fabrication and Characterization of High Performance Laser-annealed Polycrystalline Silicon Thin-Film Transistors with an Ultra-Thin Amorphous-Silicon Layer
title_sort fabrication and characterization of high performance laser-annealed polycrystalline silicon thin-film transistors with an ultra-thin amorphous-silicon layer
publishDate 2004
url http://ndltd.ncl.edu.tw/handle/dq74v8
work_keys_str_mv AT hsuehjenyang thefabricationandcharacterizationofhighperformancelaserannealedpolycrystallinesiliconthinfilmtransistorswithanultrathinamorphoussiliconlayer
AT yángxuérén thefabricationandcharacterizationofhighperformancelaserannealedpolycrystallinesiliconthinfilmtransistorswithanultrathinamorphoussiliconlayer
AT hsuehjenyang jùyǒuchāobáofēijīngxìcéngzhīgāoxiàonéngléishètuìhuǒfùjīngxìbáomódiànjīngtǐzhīzhìzuòyǔtèxìngyánjiū
AT yángxuérén jùyǒuchāobáofēijīngxìcéngzhīgāoxiàonéngléishètuìhuǒfùjīngxìbáomódiànjīngtǐzhīzhìzuòyǔtèxìngyánjiū
AT hsuehjenyang fabricationandcharacterizationofhighperformancelaserannealedpolycrystallinesiliconthinfilmtransistorswithanultrathinamorphoussiliconlayer
AT yángxuérén fabricationandcharacterizationofhighperformancelaserannealedpolycrystallinesiliconthinfilmtransistorswithanultrathinamorphoussiliconlayer
_version_ 1719091722054533120

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