Low-Frequency Noise Characterization of Deep Submicron Partially-Depleted SOI MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 92 === In recent years, SOI CMOS have been proposed as a candidate for integrated digital and RF applications due to its inherent predominance. However, the low-frequency noise in partially depleted (PD) SOI MOSFETs due to floating-body effect or interface trap would cau...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/esmg6h |