具有九十奈米側壁閘極之高射頻特性砷化鎵變異結構高電子遷移率電晶體
碩士 === 國立交通大學 === 材料科學與工程系所 === 92 === For high frequency applications, the requirement of short gate length is necessary to improve the RF performance of the devices. The main purpose of this dissertation is to shrink the gate length with sidewall gate process. By sequentially depositing and select...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/t4y994 |